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NJG1301V
MEDIUM POWER AMPLIFIER GaAs MMIC
nGENERAL DESCRIPTION NJG1301V is a medium power amplifier which is designed for use of output stage of Japanese PHS and digital wireless phone. NJG1301V features low operating voltage, high efficiency, and comes with, internal input and output matching circuit and very small SSOP package. This amplifier is operated up to 21dBm output level with very low noise generation. nPACKAGE OUTLINE
NJG1301V
nFEATURES lLow operating voltage +3.0V typ. lLow current consumption 185mA typ. @f=1.9GHz, Pout=21dBm lLow distortion (ACP) -60dBc typ. @f=1.9GHz, Pout=21dBm lReduction of redact parasitic oscillation lInput and output internal matching circuits lPackage SSOP14
nPIN CONFIGURATION V Type (Top View) 1 2 3 4 5 6 7 14 13 12 11 10 9 8
Pin connection 1.RFin 8.RFout 2.GND 9.GND 3.VGG1 10.VDD2 4.GND 11.GND 5.VGG2 12.VDD1 6.GND 13.GND 7.GND 14.GND
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NJG1301V
nABSOLUTE MAXIMUM RATINGS PARAMETER Drain Voltage Gate Voltage Input Power Power Dissipation Operating Temperature Storage Temperature SYMBOL VDD1,VDD2 VGG1,VGG2 Pin PD Topr Tstg CONDITIONS VGG1,VGG2 =-0.9V VDD1,VDD2=-3.0V VDD1,VDD2=-3.0V, VGG1,VGG2 =-0.9V At on PCB boad (Ta=+25C, Zs=Zl=50) RATINGS UNITS 6 V -4 V 10 dBm 600 mW -30~+85 C -40~+150 C
nELECTRICAL CHARACTERISTICS PARAMETER Operating Freq. Drain Voltage Gate Voltage Idle Current *1 Operating Current *1 Gate Current *2 Small Signal Gain Gain Flatness Pout at 1dB Gain Compression point Adjacent Channel Leakage Power 1 Adjacent Channel Leakage Power 2 Input VSWR Load VSWR Tolerance SYMBOL freq VDD1,2 VGG1,2 Iidle IDD IGG Gain Gflat P-1dB Pacp1 Pacp2 VSWRi CONDITIONS VDD1,2=3.0V VDD1,2=3.0V, Iidle=170mA VDD1,2=3.0V, RF No signal VDD1,2=3.0V, Pout=21dBm VDD1,2=3.0V, Pout=21dBm VDD1,2=3.0V, Iidle=170mA VDD1,2=3.0V, Iidle=170mA VDD1,2=3.0V VDD1,2=3.0V, Pout=21dBm offset=600kHz, Pin; /4 DQPSK VDD1,2=3.0V, Pout=21dBm offset=900kHz, Pin; /4 DQPSK VDD1,2=3.0V VDD1,2=3.0V, Pout=21dBm Load VSWR=4:1, All phase MIN 1.89 2.9 -1.25 165 170 -150 20 0 21 (Ta=25C, Zs=Zl=50) TYP MAX UNITS 1.92 GHz 3.0 5.0 V -0.9 -0.6 V 170 175 mA 185 195 mA -70 uA 23 26 dB 0.5 1.0 dB 22 -60 -65 -55 -60 dBm dBc dBc
2.2 Parasitic Osc. vs Fundamental Signal Level -60dBc Max.
*1: Total current of VDD1 terminal and VDD2 terminal *2: Total current of VGG1 terminal and VGG2 terminal
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NJG1301V
nTYPICAL CHARACTERISTICS
Gain vs. Frequency
(V =3.0V, I =170mA, V
DD DD GG
=-0.71V, T =25 C )
a
o
40
30
Gain (dB)
20
10
0
-10 0.0
1.0 2.0 Frequency f (GHz)
3.0
P
-50
acp
vs. Operating Current vs. V
(P
out
DD
=21dBm ,f=1.9GHz, T =25 C)
a
o
(V
250
Operating Current, Gate Current vs. Input Power o
DD
=3.0V, I
idle
=170mA, f=1.9GHz ,T a =25 C)
10
V =2.9V
(mA)
-55
DD
I 200
DD
(dBc)
Operating Current I
acp
3.3V -65 5.0V -70 4.0V -75 140
P
I 150
GG
-10
100
-20 -10 -5 0 Input Power Pin (dBm) 5 10
150
160
170
180
DD
190
200
Operating Current I (mA)
Gain, Pacp vs. Ambient Temperature
(V
28 DD
Operating Current vs. Ambient Temperature
(VDD=3.0V, idle=170mA, P =21dBm, f=1.9GHz) I out
190
=3.0V, I
idle
=170mA, P
out
=21dBm, f=1.9GHz)
-55
26 P Gain (dBm)
acp
Operating Current I (mA)
24
-60
Gain 22
P
acp
(dBc)
DD
185
180
20 -40 -20 0 20 40
o
-65 60 80 Ambient Temperature T a ( C)
175 -40
-20
0
20
40
a
60
80
Ambient Temperature T ( oC)
Gate Current I
GG
-60
DD
3.0V
0
( uA)
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NJG1301V
nTYPICAL CHARACTERISTICS
Gain vs. PHS Band Frequency
(V =3.0V, I =170mA, V =-0.71V, T =25 C)
DD DD GG a o
|S |, |S | vs. Frequency
11 22
25
20
(V
DD
=3.0V, I =170mA, T =25 C)
DD a
o
24
10
Gain (dB)
|S |, |S | (dB)
23
0 |S |
22
11
22
22
-10 |S11| -20
21
20 1.89
-30
1.90
1.91
1.92
0.0
1.0
2.0
3.0
Frequency f (GHz)
Frequency f (GHz)
Output Power,Total Current vs. Input Power
(V
25 DD
Output Power,P.A.E. vs. Input Power
( V =3V, f=1.9GHz, T =25 C )
DD a o 25 70
=3V, f=1.9GHz, T =25 C )
a 350
o
Output Power @I
20
idle
=80mA
300 20
Output Power @I
idle
=80mA
60 50
60mA 40mA 20mA
60mA 40mA
Total Current (mA)
15 10 5 0 -5 -10 -25 -20 -15 -10 -5 0
250 200 150
15 10 5 0 -5 -10 -25 -20 -15 -10 -5
in
Output Power P
Output Power P
20mA P.A.E. @I =80mA 40 idle 60mA 40mA 20mA
30 20 10 0 0 5 10
Total Current @I =80mA
idle
100 50 0 5 10
60mA 40mA 20mA
Input Power P in (dBm)
Input Power P (dBm)
-4-
Power Added Efficiency (%)
(dBm)
out
out
(dBm)
NJG1301V
nRECOMMENDED CIRCUIT
V TYPE
RFin 1 RFin GND VGG (-0.5 ~ -1.2V) IDD=0 @VGG < -2V
C3 C1 C2
GND 14 GND VDD1 GND VDD2 GND RFout C1: 1000pF C2: 33pF C3: 1uF C4: 2.2nH 8 RFout
L1 C2 C1 C3 C2 C1
VGG1 GND
VDD (3.0~5.0V)
C1
C2
VGG2 GND 7 GND
nRECOMMENDED PCB DESIGN
PCB : FR4 t=0.2mm
1uF
CAPACITOR MURATA GRM39 Series INDUCTOR TAIYO-YUDEN HK1608 Series
2.2nH
1uF
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NJG1301V
nAPPLICATION CIRCUIT ( NEGATIVE VOLTAGE GENERATOR)
+3.0V
-3.0V
-
10KTrimmer Resistance 10uF (7K)
VGG (-0.9Vtyp.)
8
7
6
5
+
NJU7660
1 2 3 4 (3K)
+
-
10uF
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NJG1301V
nPACKAGE OUTLINE (SSOP14)
Lead material Lead surface finish Molding material UNIT Weight
: Copper : Solder plating : Epoxy resin : mm :66mg
Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. * Do NOT eat or put into mouth. * Do NOT dispose in fire or break up this product. * Do NOT chemically make gas or powder with this product. * To waste this product, please obey the relating law of your country. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages.
[CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights.
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